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- ETRI,
KETI, KT(Çѱ¹Åë½Å),
KERI(Çѱ¹Àü±â¿¬±¸¿ø),
»ï¼ºÁ¾±â¿ø, Analog
Chips, Æ÷Ç×°ø´ë,
KAIST, °æºÏ´ë, ±¤¿î´ë
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Available
Fabrication Processes
| Vendor |
Feature Size |
Metal Layers |
Voltage |
Description |
| AMIS
|
0.35 |
4 |
3.3 |
NPN, PNP,
capacitor, I3T80
|
| |
4 |
3.3 |
2-poly,
capacitor, C3O
|
The C3O process is available for dedicated runs, but not
multi-project wafer runs.
|
| 0.50 |
3 |
5.0 |
2-poly,
resistor, C5F/N
|
| 0.70 |
3 |
100 |
1-poly,
resistor, I2T100
|
| 1.50 |
2 |
5.0 |
2-poly,
NPN ABN
|
|
| TSMC
|
0.13 |
8 |
1.2/2.5 |
LO,
salicide block, varactor, non-epitaxial wafers (epitaxial available at additional cost), CL013G
|
| 8 |
1.2/2.5 |
MM, MiM
capacitor, RPO, deep n-well, inductor, non-epitaxial wafer CR013G
(CM013G)
|
| 8 |
1.5/2.5 |
Low-power
logic, non-epitaxial wafers (epitaxial available at additional cost), CL013LP
|
| 8 |
1.0/2.5 |
Low-voltage logic, non-epitaxial wafers (epitaxial available at additional cost), CL013LV
|
| 0.18 |
6 |
1.8/3.3 |
LO, RPO,
non-epitaxial wafers (epitaxial available at additional cost), CL018
|
6 |
1.8/3.3 |
MM,
MiM capacitor, RPO, deep n-well, inductor, non-epitaxial wafer, CR018
(CM018) |
6 |
1.8/3.3 |
Low-power logic, non-epitaxial wafers (epitaxial available at additional cost), CL018LP |
6 |
1.5/3.3 |
Low-voltage logic, non-epitaxial wafers (epitaxial available at additional cost), CL018LV |
6 |
1.8/5/32 |
High-voltage, non-epitaxial wafers (epitaxial available at additional cost), CL018HV
|
| 0.25 |
5 |
2.5/3.3 |
LO, RPO,
non-epitaxial wafers (epitaxial available at additional cost), CL025
|
5 |
2.5/3.3 |
MM,
MiM capacitor, RPO, deep n-well, varactor, inductor, non-epitaxial wafer, CR025
(CM025)
|
| 0.35 |
4 |
3.3/5.0 |
LO, RPO,
5.0 V ESD, non-epitaxial wafers (epitaxial available at additional cost), CL035
(TSMC35_SIL) |
4 |
3.3/5.0 |
MM,
PiP (2-poly), 5.0 V ESD, non-epitaxial wafers (epitaxial available at additional cost), CM035
(TSMC35_P2) |
4 |
3.3/12 |
High-voltage, 2 poly, non-epitaxial wafers (epitaxial available at
additional cost), CL035HV
|
|
| IBM
(CMOS) |
90 nm |
8 |
1.0 |
(M1, M2,
M3, M4, M5, M6, M1_2B, M2_2B) 9SF
(logic)
|
| |
8 |
1.0 |
(M1, M2,
M3, M4, M5, M6, M1_2B, M2_2B) 9LP
(low-power logic)
|
| |
9 |
1.0 |
(M1, M2,
M3, M4, M5, M1_2B, M2_2B, M1_4B, M2_4B) 9RF
(mixed-mode) |
| 0.13 |
8 |
1.2/2.5 |
(M1, M2, M3, M4, M5, M6, MQ, LM), 8RF-LM
(logic)
|
| |
8 |
1.2/2.5 |
(M1, M2,
M3, MQ, MG, LY, E1, MA), 8RF-DM
(mixed-mode)
|
|
0.18
|
6 |
1.8/3.3 |
(M1, M2,
M3, M4, M5, LM), 7SF
(logic)
|
| |
6 |
1.8/3.3 |
(M1, M2,
M3, M4, MT, ML), 7RF
(mixed-mode)
|
| 0.25 |
5 |
2.5/3.3 |
MiM
capacitor (Q3/Q4, nitride), 6RF
(mixed-mode) |
|
|
IBM (CIMG)
|
0.18 |
6 |
1.8/3.3 |
(0.13 µm
M1, M2, M3, MZ), CIMG7HY (CMOS Image Sensor) |
| |
|
| IBM
(SiGe) |
0.13 |
7 |
1.2/2.5 |
(M1, M2,
M3, M4, MQ, LY, AM), MiM capacitor 8HP
|
| 0.18 |
7 |
1.8/3.3 |
(M1, M2,
M3, M4, MT (=LY), E1, MA), MiM capacitor (QT/HT, 4.1 fF/µm²), 7WL
|
| 5 |
1.8, 2.5/3.3 |
(M1, M2,
MT, LY, AM), 7HP
|
| 0.25 |
7 |
2.5 |
(M1, M2,
M3, M4, MT, E1, MA), MiM capacitor (Q5 to MT, nitride), 6DM
|
| 6 |
2.5 |
(M1, M2,
M3, M4, MT, AM), MiM capacitor (Q5 to MT, nitride), 6HP
|
| 0.35 |
4 |
3.3/5 |
(M1, M2,
MT, AM), MiM capacitor (QT/HT, nitride), 5HPE
|
| 0.50 |
5 |
3.3 |
(M1, M2,
MT, E1, MA), MiM capacitor (H3/Q3 to MT, nitride), 5DM
|
| 4 |
3.3 |
(M1, M2,
MT, AM), MiM capacitor (Q2 to M2, nitride), 5AM
|
| 4 |
3.3 |
(M1, M2,
MT, AM), MiM capacitor, 5PA
|
| 3 |
3.3 |
(M1, M2,
LM), MiM capacitor (Q2 to M2), 5HP
|
|
| austriamicrosystems |
| |
0.35 |
4 |
3.3/5 |
Hires
Poly, MiM, CMOS, C35B4C3 |
| |
|
4 |
3.3/5 |
CMOS-Opto,
PiP, C35B4O1 |
| |
|
4 |
3.3/5 |
Thick
metal 4, MiM, CMOS, C35B4M3 |
| |
|
4 |
50 |
HV-CMOS,
Hires poly, H35B4D3 |
| |
|
4 |
2.5 |
SiGe
BiCMOS, MiM, S35D4
|
| |
0.80 |
2 |
50 |
HV CMOS,
CXZ
|
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-
Multi-Project Wafer (MPW) 2007 Fabrication Schedule Last Update: 2007 Mar 02 (bb) Runs close at 1 PM PT
(Pacific/California Time) on the date listed.
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