홈 > Semiconductor > ASIC > M.P.W(SEMS)
  

 

 

 

 

    

 

셀로코(주)는 MOSIS의 한국공식대리점으로 MOSIS(M.P.W)의 모든 제품을 한국내에 독점으로 공급할 수 있습니다.

 

 

 

소량의 Prototype 칩을 경제적인 가격으로 공정(MPW)
Full-Custom, Standard Cell, Customer Tooling(Wafer)
소량에서 Midium(500,2000 die, etc) 까지 제작 가능
Dedicated Run(COT :Customer Owned Tooling) 가능
  => Run Schedule에 상관없이 사용자 일정에 맞춰 언제라도 제작 가능
 Mixed Signal(Analog와 Digital)로 설계된 블록의 검증
GaAs 공정을 이용한 고주파 회로 설계
1달에 한 번 Run Schedule로 빠른 진행 및 빠른 납기 보장

 

 

 

 

 

CMOS Analog, Digital
CMOS RF
Image IC
CCD 이용 Display Chips
MEMS Device
GaAs, SiGe 공정 및 Device

 

 

 

 

 

기업체, 연구소, 대학교에서 저렴하고 빠르게 소량의 Chip 제작를 원하는 분.
연구 개발용으로 새로운 기능·성능의 회로, 저전력 회로, 고속 회로등을 설계·제작
  하고자 하는 분.
국내 주요 Customer
  - ETRI, KETI, KT(한국통신), KERI(한국전기연구원), 삼성종기원, Analog Chips,
     포항공대, KAIST, 경북대, 광운대

 

 

 

Available Fabrication Processes

Vendor Feature Size Metal Layers Voltage Description
AMIS 0.35 4 3.3 NPN, PNP, capacitor, I3T80
  4 3.3 2-poly, capacitor, C3O
The C3O process is available for dedicated runs, but not multi-project wafer runs.

0.50 3 5.0 2-poly, resistor, C5F/N
0.70 3 100 1-poly, resistor, I2T100
1.50 2 5.0 2-poly, NPN ABN
TSMC 0.13 8 1.2/2.5 LO, salicide block, varactor, non-epitaxial wafers (epitaxial available at additional cost), CL013G

8 1.2/2.5 MM, MiM capacitor, RPO, deep n-well, inductor, non-epitaxial wafer CR013G (CM013G)

8 1.5/2.5 Low-power logic, non-epitaxial wafers (epitaxial available at additional cost), CL013LP

8 1.0/2.5 Low-voltage logic, non-epitaxial wafers (epitaxial available at additional cost), CL013LV

0.18 6 1.8/3.3 LO, RPO, non-epitaxial wafers (epitaxial available at additional cost), CL018

6
1.8/3.3
MM, MiM capacitor, RPO, deep n-well, inductor, non-epitaxial wafer, CR018 (CM018)

6
1.8/3.3
Low-power logic, non-epitaxial wafers (epitaxial available at additional cost), CL018LP

6
1.5/3.3
Low-voltage logic, non-epitaxial wafers (epitaxial available at additional cost), CL018LV

6
1.8/5/32
High-voltage, non-epitaxial wafers (epitaxial available at additional cost), CL018HV

0.25 5 2.5/3.3 LO, RPO, non-epitaxial wafers (epitaxial available at additional cost), CL025

5
2.5/3.3
MM, MiM capacitor, RPO, deep n-well, varactor, inductor, non-epitaxial wafer, CR025 (CM025)

0.35 4 3.3/5.0 LO, RPO, 5.0 V ESD, non-epitaxial wafers (epitaxial available at additional cost), CL035 (TSMC35_SIL)

4
3.3/5.0
MM, PiP (2-poly), 5.0 V ESD, non-epitaxial wafers (epitaxial available at additional cost), CM035 (TSMC35_P2)

4
3.3/12
High-voltage, 2 poly, non-epitaxial wafers (epitaxial available at additional cost), CL035HV

IBM (CMOS) 90 nm 8 1.0 (M1, M2, M3, M4, M5, M6, M1_2B, M2_2B) 9SF (logic)

  8 1.0 (M1, M2, M3, M4, M5, M6, M1_2B, M2_2B) 9LP (low-power logic)

  9 1.0 (M1, M2, M3, M4, M5, M1_2B, M2_2B, M1_4B, M2_4B) 9RF (mixed-mode)
0.13 8 1.2/2.5 (M1, M2, M3, M4, M5, M6, MQ, LM), 8RF-LM (logic)

  8 1.2/2.5 (M1, M2, M3, MQ, MG, LY, E1, MA), 8RF-DM (mixed-mode)

0.18

 6 1.8/3.3 (M1, M2, M3, M4, M5, LM), 7SF (logic)

  6 1.8/3.3 (M1, M2, M3, M4, MT, ML), 7RF (mixed-mode)

0.25 5 2.5/3.3 MiM capacitor (Q3/Q4, nitride), 6RF (mixed-mode)

IBM (CIMG)

0.18 6 1.8/3.3 (0.13 µm M1, M2, M3, MZ), CIMG7HY (CMOS Image Sensor)
 
IBM (SiGe) 0.13 7 1.2/2.5 (M1, M2, M3, M4, MQ, LY, AM), MiM capacitor 8HP

0.18 7 1.8/3.3 (M1, M2, M3, M4, MT (=LY), E1, MA), MiM capacitor (QT/HT, 4.1 fF/µm²), 7WL

5 1.8, 2.5/3.3 (M1, M2, MT, LY, AM), 7HP

0.25 7 2.5 (M1, M2, M3, M4, MT, E1, MA), MiM capacitor (Q5 to MT, nitride), 6DM

6 2.5 (M1, M2, M3, M4, MT, AM), MiM capacitor (Q5 to MT, nitride), 6HP

0.35 4 3.3/5 (M1, M2, MT, AM), MiM capacitor (QT/HT, nitride), 5HPE

0.50 5 3.3 (M1, M2, MT, E1, MA), MiM capacitor (H3/Q3 to MT, nitride), 5DM

4 3.3 (M1, M2, MT, AM), MiM capacitor (Q2 to M2, nitride), 5AM

4 3.3 (M1, M2, MT, AM), MiM capacitor, 5PA

3 3.3 (M1, M2, LM), MiM capacitor (Q2 to M2), 5HP
austriamicrosystems
  0.35 4 3.3/5 Hires Poly, MiM, CMOS, C35B4C3
    4 3.3/5 CMOS-Opto, PiP, C35B4O1
    4 3.3/5 Thick metal 4, MiM, CMOS, C35B4M3
    4 50 HV-CMOS, Hires poly, H35B4D3
    4 2.5 SiGe BiCMOS, MiM, S35D4
  0.80 2 50 HV CMOS, CXZ

 

 

 

 

Multi-Project Wafer (MPW)
2007 Fabrication Schedule
Last Update: 2007 Mar 02 (bb)
Runs close at 1 PM PT (Pacific/California Time) on the date listed.

Processes Customer Submission Date
2007
AMIS Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
I3T80 0.35   26     21     27     26  
C5F/N 0.50 8 12 19 23   4 16 27   8 26  
I2T100 0.70 16     2   11   20   29    
ABN 1.50 16   5 16 28   9 20   1 12  
TSMC Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
CR013G (CM013G), CLO13G 0.13 8   12   7     13¹     26¹  
CR013LP 0.13 8   12   7     13¹     26¹  
CR013LV 0.13 8   12   7     13¹     26¹  
CR018 (CM018), CLO18 0.18 22   19   21   23   17   12  
CLO18LP 0.18   12     7     21¹     12¹  
CLO18LV 0.18 22   19   21   23¹   17¹   12¹  
CLO18HV 0.18   12     7     27¹     19¹  
CR025 (CM025), CLO25 0.25   12   9   11   27     5  
CM035, CLO53 0.35 16   5     4     4     3
CLO35HV 0.35     5     4     4¹     3¹
IBM BiCMOS SiGe Jan Feb Mar Apr May Jun