support list *****
MyCAD
EDA
Semiconductor
Design Center
니다.
MOSIS Fabrication
Processes
IBM Fabrication
Processes
IBM
CMOS and IBM RF
CMOS Processes
Feature Size
Metal
Voltage
Process Name
65 nm
8
1.0 V core, 1.8, 1.5 V I/O
10SF
65 nm
8
1.2, 1.5 V core, 1.8 V I/O
10LPe
90 nm
8
1.0 V core, 2.5 V I/O
9SF
90 nm
8
1.2 V core, 2.5 V I/O
9LP
90 nm
8
1.2 V core, 2.5 V I/O
9RF
0.13
8
1.2/2.5
8RF-LM
0.13
8
1.2/2.5
8RF-DM
0.18
6
1.8/3.3
7SF
0.18
6
1.8/3.3
7RF
0.25
5
2.5/3.3
6RF
IBM SiGe BiCMOS
Processes
Feature
Size
Metal
CMOS
SiGe
Ft [GHz] | BVceo (1) [V]
Process
Name
High Performance
High Breakdown
0.13
7
1.2, 2.5, 3.3
200 | 1.77
57 | 3.55
8HP
0.13
5
1.2, 2.5, 3.3
103 | 2.4
54 | 4.7
8WL
0.18
7
1.8, 2.5, 3.3
60 | 3.3
29 | 6.0
7WL
0.18
5
1.8, 2.5, 3.3
120 | 2.0
20 | 4.75
7HP
0.25
5
2.5, 3.3
60 | 3.2
29 | 6.0
6WL
0.25
6
2.5, 3.3
47 | 3.3
27 | 5.7
6HP/6DM
0.35
4
3.3, 5.0
43 | 3.3
19 | 9.6
5HPE
0.35
4
3.3, 5.0
35 | 5.5
25 | 7.5
5PAe
0.50
5
3.3
51 | 3.3
27 | 5.5
5DM
0.50
4
3.3
51 | 3.3
27 | 5.5
5AM
0.50
4
3.3
51 | 3.3
24 | 7.0
5PA
0.50
3
3.3
51 | 3.3
27 | 5.5
5HP
IBM
CIMG Process (CMOS Image Sensor)
Feature Size
Metal
Voltage
Process Name
0.18
4
1.8/3.3
CIMG7HY
0.18
4
1.8/3.3
CIMG7SF
IBM Fabrication
Schedule
Technology
Customer Submission Date
SiGe BiCMOS
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
8HP 0.13 µm
21
11
8
8WL 0.13 µm
19
30
20
7WL 0.18 µm 22
17
5
14
8
10
6WL 0.25 µm
3
3
5HPE 0.35 µm 14
7
7
6
5PAe 0.35 µm
11
16
22
1
5HP/5AM 0.50 µm
4
2
3
CMOS
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
10LPe 65 nm
7
25
15
10RFe65 nm
7
25
15
10SF 65 nm
7
28
24
9SF 90 nm 28
21
21
27
9RF 90 nm
17
27
25
24
9LP 90 nm
17
27
25
24
8RF-DM 0.13 µm 28
24
12
21
15
8RF-LM 0.13 µm Submissions can be added to 8RF-DM runs with sufficent advance notice to
support@mosis.com .
7RF 0.18 µm
11
14
23
4
20
TSMC Fabrication
Processes
Feature Size
Process
Description
TSMC 0.13
CL013G Standard
logic, RPO
CR013G (CM013) Mixed-mode/RF, RPO, MiM
CL013LP Low-power
logic, RPO
CL013LV Low-voltage logic, RPO
TSMC 0.18
CL018 Standard
logic, RPO
CR018 (CM018) Mixed-mode/RF, RPO, MiM
CL018LP Low-power
logic, RPO
CL018LV Low-voltage logic, RPO
CL018HV High-voltage, RPO
TSMC 0.25
CL025 Standard
logic, RPO
CR025 (CM025) Mixed-mode/RF, RPO, MiM
TSMC 0.35
CL035 Standard
logic, 5.0 V ESD, RPO
CM035 Mixed-mode/RF, 5.0 V ESD, PiP, 2-poly
CL035HV High-voltage, RPO
These processes use non-epitaxial wafers. Epitaxial wafers are
available at an additional cost.
TSMC Fabrication
Schedule
Technology
Customer Submission Date
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
CR013G (CM013G) , CL013G 0.13 µm 28
3, 31
21
5
2, 16,
30
4, 18
2
6, 20
3
1
CL013LP 0.13 µm
19
3, 31
21
5
2, 16,
30
4, 18
2
6, 20
3
1
CL013LV 0.13 µm 28
3, 31
21
5
2, 16,
30
4, 18
2
6, 20
3
1
CR018 (CM018), CL018 0.18 µm
7
10, 24
7, 21
5, 12,
19
2, 16,
30
21
4, 25
8, 22
6, 20
3, 10,
17
1
CL018LP 0.18 µm
25
24
5, 19
16
4, 25
22
3, 17
CL018LV 0.18 µm 28
10, 24
7, 21
5, 12
2, 16,
30
21
4
8, 22
6, 20
3, 10
1
CL018HV 0.18 µm
11
5
4
3
CR025 (CM025), CL025 0.25 µm
11
7
5
2, 23
28
8, 29
27
1
CM035, CL035 0.35 µm
3
2
11
13
1
CL035HV 0.35 µm
3
2
11
13
1
AMIS Fabrication
Processes
Feature Size
Metal
Voltage
Description
0.35
4
3.3
Mixed-Mode, I3T80
0.35
4
3.3
Mixed-Mode, C3O
The C3O process is available for dedicated runs, but not
multi-project wafer runs.
0.50
3
5
Mixed-Mode, C5
0.70
3
5
Mixed-Mode, I2T100
1.50
2
5
Mixed-Mode, ABN
AMIS Fabrication
Schedule
Technology
Customer Submission Date
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
I3T80 0.35
25
12
25
24
C5F/N 0.50 14
25
7
19
30
11
22
3
15
I2T100 0.70 14
31
9
18
27
ABN 1.50 7
3
28
23
18
13
8
austriamicrosystems Fabrication Processes
Feature Size
Metal
Voltage
Description
0.35
4
3.3/5
CMOS,
2-poly, C35B4C3
3.3/5
CMOS-Opto,
2-poly, C35B4O1
3.3/5
CMOS,
Thick Metal, MiM, C35B4M3
50
HV-CMOS,
High resistive poly, H35B4D3
See Compare
AMS 0.35 µm CMOS Processes
0.35
4
2.5
SiGe
BiCMOS, MiM capacitor, and high resistive poly, S35D4
0.80
2
50
HV-CMOS,
3-poly, high resistance, vertical NPN, CXZ
austriamicrosystems Fabrication Schedule
Technology
Customer Submission Date
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
C35B4C3 0.35 CMOS
14
10
21
16
21
22
13
C35B4O1 0.35 CMOS-Opto
14
10
21
16
21
22
13
C35B4M3 0.35 Thick Metal
CMOS
25
2
2
10
H35B4D3 0.35 HV CMOS
28
28
4
27
S35D4 0.35 SiGe
25
2
2
10
CXZ 0.80 HV CMOS
3
23
6
To be considered ontime for an MPW run, layout and paperwork are due to MOSIS by
1 PM PT (Pacific/California Time) on the date listed.
셀로코(주)는
MOSIS의 한국공식대리점으로
MOSIS(M.P.W)의 모든
제품을 한국내에 독점으로
공급할 수 있습
소량의
Prototype 칩을 경제적인
가격으로
공정(MPW)
