Ȩ > Semiconductor > MPW Solution
 
 
   
 
 
   
  ¼¿·ÎÄÚ(ÁÖ)´Â MOSISÀÇ Çѱ¹°ø½Ä´ë¸®Á¡À¸·Î MOSIS(M.P.W)ÀÇ ¸ðµç Á¦Ç°À» Çѱ¹³»¿¡ µ¶Á¡À¸·Î °ø±ÞÇÒ ¼ö ÀÖ½À ´Ï´Ù.
   
 
 

¼Ò·®ÀÇ Prototype ĨÀ» °æÁ¦ÀûÀÎ °¡°ÝÀ¸·Î °øÁ¤(MPW)
Full-Custom, Standard Cell, Customer Tooling(Wafer)
¼Ò·®¿¡¼­ Midium(500,2000 die, etc) ±îÁö Á¦ÀÛ °¡´É
Dedicated Run(COT :Customer Owned Tooling) °¡´É
  => Run Schedule¿¡ »ó°ü¾øÀÌ »ç¿ëÀÚ ÀÏÁ¤¿¡ ¸ÂÃç ¾ðÁ¦¶óµµ Á¦ÀÛ °¡´É
Mixed Signal(Analog¿Í Digital)·Î ¼³°èµÈ ºí·ÏÀÇ °ËÁõ
GaAs °øÁ¤À» ÀÌ¿ëÇÑ °íÁÖÆÄ È¸·Î ¼³°è
1´Þ¿¡ ÇÑ ¹ø Run Schedule·Î ºü¸¥ ÁøÇà ¹× ºü¸¥ ³³±â º¸Àå

   
 

 

 

CMOS Analog, Digital
CMOS RF
Image IC
CCD ÀÌ¿ë Display Chips
MEMS Device
GaAs, SiGe °øÁ¤ ¹× Device

   
 
 

 

±â¾÷ü, ¿¬±¸¼Ò, ´ëÇб³¿¡¼­ Àú·ÅÇÏ°í ºü¸£°Ô ¼Ò·®ÀÇ Chip Á¦ÀÛ¸¦ ¿øÇÏ´Â ºÐ.
¿¬±¸ °³¹ß¿ëÀ¸·Î »õ·Î¿î ±â´É·¼º´ÉÀÇ È¸·Î, ÀúÀü·Â ȸ·Î, °í¼Ó ȸ·ÎµîÀ» ¼³°è·Á¦ÀÛ
  ÇϰíÀÚ ÇÏ´Â ºÐ.
±¹³» ÁÖ¿ä Customer
  - ETRI, KETI, KT(Çѱ¹Åë½Å), KERI(Çѱ¹Àü±â¿¬±¸¿ø), »ï¼ºÁ¾±â¿ø, Analog Chips,
     Æ÷Ç×°ø´ë, KAIST, °æºÏ´ë, ±¤¿î´ë

   

 

MOSIS Fabrication Processes

IBM Fabrication Processes

IBM CMOS and IBM RF CMOS Processes
Feature Size Metal Voltage Process Name
65 nm 8 1.0 V core, 1.8, 1.5 V I/O

10SF


65 nm 8 1.2, 1.5 V core, 1.8 V I/O

10LPe


90 nm 8 1.0 V core, 2.5 V I/O

9SF


90 nm 8 1.2 V core, 2.5 V I/O

9LP


90 nm 8 1.2 V core, 2.5 V I/O