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¼¿·ÎÄÚ(ÁÖ)´Â MOSISÀÇ Çѱ¹°ø½Ä´ë¸®Á¡À¸·Î MOSIS(M.P.W)ÀÇ ¸ðµç Á¦Ç°À» Çѱ¹³»¿¡ µ¶Á¡À¸·Î °ø±ÞÇÒ ¼ö ÀÖ½À ´Ï´Ù. |
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±â¾÷ü,
¿¬±¸¼Ò, ´ëÇб³¿¡¼
Àú·ÅÇÏ°í ºü¸£°Ô
¼Ò·®ÀÇ Chip Á¦ÀÛ¸¦
¿øÇÏ´Â ºÐ. ¿¬±¸
°³¹ß¿ëÀ¸·Î »õ·Î¿î
±â´É·¼º´ÉÀÇ È¸·Î,
ÀúÀü·Â ȸ·Î, °í¼Ó
ȸ·ÎµîÀ» ¼³°è·Á¦ÀÛ
ÇϰíÀÚ
ÇÏ´Â ºÐ. ±¹³»
ÁÖ¿ä Customer
- ETRI,
KETI, KT(Çѱ¹Åë½Å),
KERI(Çѱ¹Àü±â¿¬±¸¿ø),
»ï¼ºÁ¾±â¿ø, Analog
Chips, Æ÷Ç×°ø´ë,
KAIST, °æºÏ´ë, ±¤¿î´ë
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MOSIS Fabrication
Processes
IBM Fabrication
Processes
IBM
CMOS and IBM RF
CMOS Processes
|
| Feature Size
| Metal
| Voltage
| Process Name
|
| 65 nm
| 8
| 1.0 V core, 1.8, 1.5 V I/O
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10SF
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| 65 nm
| 8
| 1.2, 1.5 V core, 1.8 V I/O
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10LPe
|
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| 90 nm
| 8
| 1.0 V core, 2.5 V I/O
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9SF
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| 90 nm
| 8
| 1.2 V core, 2.5 V I/O
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9LP
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| 90 nm
| 8
| 1.2 V core, 2.5 V I/O
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